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Catálogo » Componentes » Modulos De Memoria

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Kingston 4GB DDR3 1600MHz PC3L-12800 SO-DIMM

Caracteristicas de Kingston 4GB DDR3 1600MHz PC3L-12800 SO-DIMM

This document describes ValueRAM's 512M x 64-bit (4GB) DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 1Rx8, low voltage, memory module, based on eight 512M x 8-bit FBGA components.
The SPD is programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V.
This 204-pin SODIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:

SPECIFICATIONS
CL(IDD) 11 cycles
Row Cycle Time (tRCmin) 48.125ns (min.)
Refresh to Active/Refresh 260ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 35ns (min.)
Maximum Operating Power (1.35V) = 2.376 W*
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100 o C
*Power will vary depending on the SDRAM.

FEATURES
· JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply
· VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
· 800MHz fCK for 1600Mb/sec/pin
· 8 independent internal bank
· Programmable CAS Latency: 11, 10, 9, 8, 7, 6
· Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
· 8-bit pre-fetch
· Burst Length: 8 (Interleave without any limit, sequential with starting address ?000? only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
· Bi-directional Differential Data Strobe
· Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
· On Die Termination using ODT pin
· Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
· Asynchronous Reset
· PCB: Height 1.18? (30mm), double sided component (Chips en las dos caras)

PVP : 41,40 € (IVA inc)

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